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SiC MOSFETs and Diodes

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ATS SiC Portfolio Overview

ATS SiC Diode Technology

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JBS & MPS structure for conduction loss and surge current capability balance.

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p Low VF diodes is about 1.25V typical compare with normal VF of typical 1.45V or 1.5V

p Low VF SiC diodes give ~25% lower On-state-Voltage drop VF under high temp. 150oC

p Low VF SiC diodes gives about 0.2% efficiency improvement under the same application condition by just replace the SiC diode.

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p The 3rd Generation SiC-MOSFET Technology

p 28% reduction on Ron*Area compare with previous generation.

p 15V driving voltage capability.

p Stable RDS(on) at high/low temperature

p reliability test with negative Vgs bias to ensure gate robustness under < 0V gate driving.

p High reliability to meet Industrial standard, Automotive capability is under qualification.

p Comparable performance with global tier-1 competitors

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p Improved Gate Oxide à Lower Rch

p Higher concentration of Epi-doping à Lower RJFET

p Thin Wafer à Lower RSUB

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High RDS(on) vs Temperature coefficient

p High Gate Oxide reliability

p HTGB test with negative Vgs bias(-10V~22V)

SiC-MOSFET Performance Comparison

SiC Diodes Table

Part Number	Qualification	VR	IF(TC=150oC)	VF (TJ=25oC)	Package
ATSCD0465V	Industrial	650 V	4 A	1.40 V	DFN 5x6
ATSC6D0465D	Industrial	650 V	4 A	1.25 V	TO252-2
ATSCD0465L	Industrial	650 V	4 A	1.40 V	DFN 8x8
ATSCD0465	Industrial	650 V	4 A	1.40 V	TO220-2
ATSCD0465D	Industrial	650 V	4 A	1.40 V	TO252-2
ATSCD0665L	Industrial	650 V	6 A	1.45 V	DFN 8x8
ATSCD0665B	Industrial	650 V	6 A	1.45 V	TO263-2
ATSCD0665X	Industrial	650 V	6 A	1.45 V	TO220F
ATSCD0665V	Industrial	650 V	6 A	1.45 V	DFN 5x6
ATSCD0665D	Industrial	650 V	6 A	1.45 V	TO252-2
ATSCD0665	Industrial	650 V	6 A	1.45 V	TO220-2
ATSCD0865	Industrial	650 V	8 A	1.40 V	TO220-2
ATSCD1065B	Industrial	650 V	10 A	1.45 V	TO263-2
ATSCD1065	Industrial	650 V	10 A	1.45 V	TO220-2
ATSCD1065L	Industrial	650 V	10 A	1.45 V	DFN 8x8
ATSCD1065X	Industrial	650 V	10 A	1.45 V	TO220F
ATSCD1065D	Industrial	650 V	10 A	1.45 V	TO252-2
ATSCD1065W	Industrial	650 V	10 A	1.45 V	TO247-2
ATSC6D1065W	Industrial	650 V	10 A	1.25 V	TO247-2
ATSC6D1065	Industrial	650 V	10 A	1.25 V	TO220-2
ATSCD1565	Industrial	650 V	15 A	1.45 V	TO220-2
ATSC6D2065CW	Industrial	650 V	20 A	1.25 V	TO247-3
ATSCD2065CW	Industrial	650 V	20 A	1.45 V	TO247-3
ATSCD2065	Industrial	650 V	20 A	1.50 V	TO220-2
ATSCD2065W	Industrial	650 V	20 A	1.50 V	TO247-2
ATSCD3065CW	Industrial	650 V	30 A	1.45 V	TO247-3
ATSC6D3065CW	Industrial	650 V	30 A	1.30 V	TO247-3
ATSCD4065W	Industrial	650 V	40 A	1.45 V	TO247-2
ATSCD4065CW	Industrial	650 V	40 A	1.45 V	TO247-3
ATSCD20120W	Industrial	1200 V	20 A	1.40 V	TO247-2
ATSCD30120W	Industrial	1200 V	30 A	1.40 V	TO247-2
ATSCD40120W	Industrial	1200 V	40 A	1.45 V	TO247-2
ATSCD40120CW	Industrial	1200 V	40 A	1.45 V	TO247-3
ATSCD50120W	Industrial	1200 V	50 A	1.40 V	TO247-2

SiC MOSFETs Table

Part Number	VDS	RDS(on)	Recommended VGS	Current Rating(A)	Total Gate Charge	Package
ATSCM30G65W	650 V	30 mΩ	15 V	70	111	TO247-4
ATSCM30G65TL	650 V	30 mΩ	15 V	TBD	TBD	TOLL
ATSCM30G65V	650 V	30 mΩ	15 V	70	111	TO247-3
ATSCM45G65W	650 V	45 mΩ	15 V	51	79	TO247-4
ATSCM45G65TL	650 V	45 mΩ	15 V	TBD	TBD	TOLL
ATSCM45G65V	650 V	45 mΩ	15 V	51	79	TO247-3
ATSCM60G65W	650 V	60 mΩ	15 V	42	176	TO247-4
ATSCM18G120W	1200 V	18 mΩ	20 V	105 A	230 nC	TO247-4
ATSCM33G120V	1200 V	33 mΩ	20 V	69 A	136 nC	TO247-3
ATSCM33G120W	1200 V	33 mΩ	20 V	69 A	136 nC	TO247-4
ATSCM33G120WS	1200 V	33 mΩ	20 V	69 A	136 nC	TO247-4
ATSCM40G120W	1200 V	40 mΩ	15 V	50 A	99 nC	TO247-4
ATSCM70G120V	1200 V	70 mΩ	20 V	39 A	72 nC	TO247-3
ATSCM70G120W	1200 V	70 mΩ	20 V	39 A	72 nC	TO247-4
ATSCM160G120V	1200 V	160 mΩ	20 V	19 A	32 nC	TO247-3
ATSCM800G170H	1700 V	800 mΩ	20 V	5.3A	19nC	TO263-7
ATSCM800G170V	1700 V	800 mΩ	20 V	5.5A	19nC	TO247-3