Driver Cores
AT Driver Cores
ATS' Gate Driver cores provide a highly flexible solution by including all commonly-required driver functions - including galvanic isolation, protection, DC/DC converter etc. Driver cores for IGBTs are available with blocking voltage capabilities from 600V to 1700V and from 1W to 4W per channel. They are also suitable for driving power MOSFETs and devices based on new materials (SiC) operating at switching frequencies up to 500 kHz.
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Product |
Description |
Max Breakdown Voltage |
Power Switch |
|---|---|---|---|
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Dual-channel AT driver core, highest integration level ultra-compact, high-quality 8A gate current and 2 x 1 W output power |
1700 V |
IGBT |
|
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Dual-channel AT driver core used by new 2ATC0435T2F1-17, 2ATC0435T2G1-17, 2AT0435T2H0-17, highest integration level, ultra-compact, high-quality 35 A gate current, and 2 x 4 W output power |
1700 V |
IGBT, SiC MOSFET |
|
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Dual-channel AT driver core, highest integration level, second source for Infineon™ 2ED300C17-S, 30 A gate current and 2 x 4 W drive power |
1700 V |
IGBT |
|
|
Dual-channel AT driver core, highest integration level, second source for Power Integration™ 2SD315AI, 15 A gate current and 2 x 3 W drive power |
1700V |
IGBT |
|
2ATC32R
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The 2ATC32R core constitutes an interface between IGBT modules and the controller. Second source for SEMIKRON™ SKYPER32R |
1700V |
IGBT |
|
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The 2ATC32PRO core constitutes an interface between IGBT modules and the controller. Second source for SEMIKRON™ SKYPER32PRO |
1700V |
IGBT |
